I.B.M. Researchers Create High-Speed Graphene Circuits

Posted in : Electrical Engineering Physics

ABSTRACT

A wafer-scale graphene circuit was demonstrated in which all circuit components, including graphene field-effect transistor and inductors, were monolithically integrated on a single silicon carbide wafer. The integrated circuit operates as a broadband radio-frequency mixer at frequencies up to 10 gigahertz. These graphene circuits exhibit outstanding thermal stability with little reduction in performance (less than 1 decibel) between 300 and 400 kelvin. These results open up possibilities of achieving practical graphene technology with more complex functionality and performance.

  • Received for publication 16 February 2011.
  • Accepted for publication 22 April 2011.
  1. Yu-Ming Lin*Alberto Valdes-GarciaShu-Jen HanDamon B. FarmerInanc MericYanning SunYanqing Wu,Christos DimitrakopoulosAlfred GrillPhaedon Avouris*Keith A. Jenkins
  1. *To whom correspondence should be addressed. E-mail: [email protected] (Y.-M.L.); [email protected] (P.A.)
For more information: http://www.sciencemag.org/content/332/6035/1294.abstract?sid=1dd2f1f3-4b65-4c20-8155-f34a73ec5446

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